CCDC-Army Research Laboratory
Podcasts / Webinars
HDIAC Webinars » Silicon Carbide Thyristor Development to Optimize High-Power System SWaP
This presentation will report on recent analysis of the turn-on speed and dI/dt capability of the n-type SiC thyristors as compared to previously reported 15 kV SiC IGBTs and 15 kV p-doped SiC thyristors. Performance metrics will be described as power density vs. switching frequency and power transmitted vs. power dissipated within the device.
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