Ms. Heather O’Brien

Podcasts / Webinars

• HDIAC Webinars » Silicon Carbide Thyristor Development to Optimize High-Power System SWaP

  This presentation will report on recent analysis of the turn-on speed and dI/dt capability of the n-type SiC thyristors as compared to previously reported 15 kV SiC IGBTs and 15 kV p-doped SiC thyristors. Performance metrics will be described as power density vs. switching frequency and power transmitted vs. power dissipated within the device.